IXTN60N50L2 Datasheet
IXTN60N50L2 Datasheet
Total Pages: 5
Size: 126.03 KB
IXYS
This datasheet covers 1 part numbers:
IXTN60N50L2
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Manufacturer IXYS Series Linear L2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 53A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 100mOhm @ 30A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 610nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 24000pF @ 25V FET Feature - Power Dissipation (Max) 735W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |
