IXTN600N04T2 Datasheet
IXTN600N04T2 Datasheet
Total Pages: 6
Size: 177.02 KB
IXYS
This datasheet covers 1 part numbers:
IXTN600N04T2
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Manufacturer IXYS Series GigaMOS™, TrenchT2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 600A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.05mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 590nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 40000pF @ 25V FET Feature - Power Dissipation (Max) 940W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |
