IXTH420N04T2 Datasheet
IXTH420N04T2 Datasheet
Total Pages: 6
Size: 163.71 KB
IXYS
This datasheet covers 1 part numbers:
IXTH420N04T2
|
Manufacturer IXYS Series TrenchT2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 420A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 315nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 19700pF @ 25V FET Feature - Power Dissipation (Max) 935W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |
