IXTH2N170D2 Datasheet
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Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1700V Current - Continuous Drain (Id) @ 25°C 2A (Tj) Drive Voltage (Max Rds On, Min Rds On) 0V Rds On (Max) @ Id, Vgs 6.5Ohm @ 1A, 0V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 110nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3650pF @ 10V FET Feature Depletion Mode Power Dissipation (Max) 568W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1700V Current - Continuous Drain (Id) @ 25°C 2A (Tj) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 6.5Ohm @ 1A, 0V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 110nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3650pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 568W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-268 Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
