IXTH04N300P3HV Datasheet
IXTH04N300P3HV Datasheet
Total Pages: 5
Size: 160.24 KB
IXYS
This datasheet covers 1 part numbers:
IXTH04N300P3HV
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Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 3000V Current - Continuous Drain (Id) @ 25°C 400mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190Ohm @ 200mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 283pF @ 25V FET Feature - Power Dissipation (Max) 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247HV Package / Case TO-247-3 Variant |
