IXTF230N085T Datasheet
IXTF230N085T Datasheet
Total Pages: 2
Size: 57.96 KB
IXYS
This datasheet covers 1 part numbers:
IXTF230N085T
IXYS Manufacturer IXYS Series TrenchMV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 85V Current - Continuous Drain (Id) @ 25°C 130A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.3mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 250mA Gate Charge (Qg) (Max) @ Vgs 187nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9900pF @ 25V FET Feature - Power Dissipation (Max) 200W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS i4-PAC™ Package / Case i4-Pac™-5 |