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IXTF230N085T Datasheet

IXTF230N085T Datasheet
Total Pages: 2
Size: 57.96 KB
IXYS
This datasheet covers 1 part numbers: IXTF230N085T
IXTF230N085T Datasheet Page 1
IXTF230N085T Datasheet Page 2

Manufacturer

IXYS

Series

TrenchMV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

85V

Current - Continuous Drain (Id) @ 25°C

130A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 250mA

Gate Charge (Qg) (Max) @ Vgs

187nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9900pF @ 25V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS i4-PAC™

Package / Case

i4-Pac™-5