IXTF1R4N450 Datasheet
IXTF1R4N450 Datasheet
Total Pages: 5
Size: 186.47 KB
IXYS
This datasheet covers 1 part numbers:
IXTF1R4N450
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Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 4500V Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 40Ohm @ 50mA, 10V Vgs(th) (Max) @ Id 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 25V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS i4-PAC™ Package / Case i4-Pac™-5 (3 Leads) |
