IXTC110N25T Datasheet
IXTC110N25T Datasheet
Total Pages: 5
Size: 177.37 KB
IXYS
This datasheet covers 1 part numbers:
IXTC110N25T
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Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 27mOhm @ 55A, 10V Vgs(th) (Max) @ Id 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 157nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V FET Feature - Power Dissipation (Max) 180W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS220™ Package / Case ISOPLUS220™ |
