IXKF40N60SCD1 Datasheet
IXKF40N60SCD1 Datasheet
Total Pages: 7
Size: 415.56 KB
IXYS
This datasheet covers 1 part numbers:
IXKF40N60SCD1
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Manufacturer IXYS Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 41A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 70mOhm @ 25A, 10V Vgs(th) (Max) @ Id 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature Super Junction Power Dissipation (Max) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS i4-PAC™ Package / Case i4-Pac™-5 (3 Leads) |
