IXFZ140N25T Datasheet
IXFZ140N25T Datasheet
Total Pages: 5
Size: 147.98 KB
IXYS
This datasheet covers 1 part numbers:
IXFZ140N25T
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Manufacturer IXYS Series GigaMOS™ HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17mOhm @ 60A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 255nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 19000pF @ 25V FET Feature - Power Dissipation (Max) 445W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DE475 Package / Case DE475 |
