IXFR64N60Q3 Datasheet
IXFR64N60Q3 Datasheet
Total Pages: 5
Size: 143.57 KB
IXYS
This datasheet covers 1 part numbers:
IXFR64N60Q3
|
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 104mOhm @ 32A, 10V Vgs(th) (Max) @ Id 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 9930pF @ 25V FET Feature - Power Dissipation (Max) 568W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case TO-247-3 |
