IXFP5N100PM Datasheet
IXFP5N100PM Datasheet
Total Pages: 4
Size: 116.74 KB
IXYS
This datasheet covers 1 part numbers:
IXFP5N100PM
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Manufacturer IXYS Series HiPerFET™, PolarP2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.8Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33.4nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1830pF @ 25V FET Feature - Power Dissipation (Max) 42W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Isolated Tab Package / Case TO-220-3 Full Pack, Isolated Tab |
