IXFN72N55Q2 Datasheet
IXFN72N55Q2 Datasheet
Total Pages: 4
Size: 560.88 KB
IXYS
This datasheet covers 1 part numbers:
IXFN72N55Q2
|
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 550V Current - Continuous Drain (Id) @ 25°C 72A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 72mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 258nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 10500pF @ 25V FET Feature - Power Dissipation (Max) 890W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |
