IXFN50N120SK Datasheet
IXFN50N120SK Datasheet
Total Pages: 4
Size: 208.57 KB
IXYS
This datasheet covers 1 part numbers:
IXFN50N120SK
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Manufacturer IXYS Series - FET Type N-Channel Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 52mOhm @ 40A, 20V Vgs(th) (Max) @ Id 2.8V @ 10mA Gate Charge (Qg) (Max) @ Vgs 115nC @ 20V Vgs (Max) +20V, -5V Input Capacitance (Ciss) (Max) @ Vds 1895pF @ 1000V FET Feature - Power Dissipation (Max) - Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |
