IXFN48N50U3 Datasheet
IXYS Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 100mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 25V FET Feature - Power Dissipation (Max) 520W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |
IXYS Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 100mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 25V FET Feature - Power Dissipation (Max) 520W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |
IXYS Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 44A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 120mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 25V FET Feature - Power Dissipation (Max) 520W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |
IXYS Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 44A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 120mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 25V FET Feature - Power Dissipation (Max) 520W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |