IXFN210N20P Datasheet
IXFN210N20P Datasheet
Total Pages: 5
Size: 124.03 KB
IXYS
This datasheet covers 1 part numbers:
IXFN210N20P
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Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 188A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10.5mOhm @ 105A, 10V Vgs(th) (Max) @ Id 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 255nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 18600pF @ 25V FET Feature - Power Dissipation (Max) 1070W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |
