IXFN180N25T Datasheet
IXFN180N25T Datasheet
Total Pages: 6
Size: 162.95 KB
IXYS
This datasheet covers 1 part numbers:
IXFN180N25T
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Manufacturer IXYS Series GigaMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 168A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 12.9mOhm @ 60A, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 345nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 28000pF @ 25V FET Feature - Power Dissipation (Max) 900W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |
