IXFL39N90 Datasheet
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Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 34A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 220mOhm @ 19.5A, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 375nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13400pF @ 25V FET Feature - Power Dissipation (Max) 580W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS264™ Package / Case ISOPLUS264™ |
