IXFL32N120P Datasheet
IXFL32N120P Datasheet
Total Pages: 5
Size: 129.81 KB
IXYS
This datasheet covers 1 part numbers:
IXFL32N120P
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Manufacturer IXYS Series HiPerFET™, PolarP2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 340mOhm @ 16A, 10V Vgs(th) (Max) @ Id 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 360nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 21000pF @ 25V FET Feature - Power Dissipation (Max) 520W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUSi5-Pak™ Package / Case ISOPLUSi5-Pak™ |
