IXFH60N65X2 Datasheet
IXFH60N65X2 Datasheet
Total Pages: 5
Size: 150.65 KB
IXYS
This datasheet covers 1 part numbers:
IXFH60N65X2
|
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 52mOhm @ 30A, 10V Vgs(th) (Max) @ Id 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6180pF @ 25V FET Feature - Power Dissipation (Max) 780W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package - Package / Case TO-247-3 |
