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IXFH46N65X2 Datasheet

IXFH46N65X2 Datasheet
Total Pages: 5
Size: 149.64 KB
IXYS
This datasheet covers 1 part numbers: IXFH46N65X2
IXFH46N65X2 Datasheet Page 1
IXFH46N65X2 Datasheet Page 2
IXFH46N65X2 Datasheet Page 3
IXFH46N65X2 Datasheet Page 4
IXFH46N65X2 Datasheet Page 5

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

46A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

76mOhm @ 23A, 10V

Vgs(th) (Max) @ Id

5.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4810pF @ 25V

FET Feature

-

Power Dissipation (Max)

660W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3