IXFH320N10T2 Datasheet
IXFH320N10T2 Datasheet
Total Pages: 6
Size: 186.77 KB
IXYS
This datasheet covers 1 part numbers:
IXFH320N10T2
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Manufacturer IXYS Series HiPerFET™, TrenchT2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 320A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 430nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 26000pF @ 25V FET Feature - Power Dissipation (Max) 1000W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD (IXFH) Package / Case TO-247-3 |
