IXFC12N80P Datasheet
IXFC12N80P Datasheet
Total Pages: 2
Size: 202.01 KB
IXYS
This datasheet covers 1 part numbers:
IXFC12N80P
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Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 930mOhm @ 6A, 10V Vgs(th) (Max) @ Id 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 25V FET Feature - Power Dissipation (Max) 120W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS220™ Package / Case ISOPLUS220™ |
