IXFB300N10P Datasheet
IXFB300N10P Datasheet
Total Pages: 4
Size: 127.46 KB
IXYS
This datasheet covers 1 part numbers:
IXFB300N10P
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Manufacturer IXYS Series HiPerFET™, PolarP2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 300A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 279nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 25V FET Feature - Power Dissipation (Max) 1500W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS264™ Package / Case TO-264-3, TO-264AA |
