IXBX75N170A Datasheet
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Manufacturer IXYS Series BIMOSFET™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1700V Current - Collector (Ic) (Max) 110A Current - Collector Pulsed (Icm) 300A Vce(on) (Max) @ Vge, Ic 6V @ 15V, 42A Power - Max 1040W Switching Energy 3.8mJ (off) Input Type Standard Gate Charge 358nC Td (on/off) @ 25°C 26ns/418ns Test Condition 1360V, 42A, 1Ohm, 15V Reverse Recovery Time (trr) 360ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package PLUS247™-3 |
Manufacturer IXYS Series BIMOSFET™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1700V Current - Collector (Ic) (Max) 110A Current - Collector Pulsed (Icm) 300A Vce(on) (Max) @ Vge, Ic 6V @ 15V, 42A Power - Max 1040W Switching Energy 3.8mJ (off) Input Type Standard Gate Charge 358nC Td (on/off) @ 25°C 26ns/418ns Test Condition 1360V, 42A, 1Ohm, 15V Reverse Recovery Time (trr) 360ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-264-3, TO-264AA Supplier Device Package TO-264 |
