IXBX75N170 Datasheet
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Manufacturer IXYS Series BIMOSFET™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1700V Current - Collector (Ic) (Max) 200A Current - Collector Pulsed (Icm) 580A Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 75A Power - Max 1040W Switching Energy - Input Type Standard Gate Charge 350nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) 1.5µs Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package PLUS247™-3 |
Manufacturer IXYS Series BIMOSFET™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1700V Current - Collector (Ic) (Max) 200A Current - Collector Pulsed (Icm) 580A Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 75A Power - Max 1040W Switching Energy - Input Type Standard Gate Charge 350nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) 1.5µs Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-264-3, TO-264AA Supplier Device Package TO-264 |
