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IXBK55N300 Datasheet

IXBK55N300 Datasheet
Total Pages: 6
Size: 215.9 KB
IXYS
This datasheet covers 2 part numbers: IXBK55N300, IXBX55N300
IXBK55N300 Datasheet Page 1
IXBK55N300 Datasheet Page 2
IXBK55N300 Datasheet Page 3
IXBK55N300 Datasheet Page 4
IXBK55N300 Datasheet Page 5
IXBK55N300 Datasheet Page 6
IXBK55N300

IXYS

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

3000V

Current - Collector (Ic) (Max)

130A

Current - Collector Pulsed (Icm)

600A

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 55A

Power - Max

625W

Switching Energy

-

Input Type

Standard

Gate Charge

335nC

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

1.9µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264

IXBX55N300

IXYS

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

3000V

Current - Collector (Ic) (Max)

130A

Current - Collector Pulsed (Icm)

600A

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 55A

Power - Max

625W

Switching Energy

-

Input Type

Standard

Gate Charge

335nC

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

1.9µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PLUS247™-3