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IXBF50N360 Datasheet

IXBF50N360 Datasheet
Total Pages: 6
Size: 202.66 KB
IXYS
This datasheet covers 1 part numbers: IXBF50N360
IXBF50N360 Datasheet Page 1
IXBF50N360 Datasheet Page 2
IXBF50N360 Datasheet Page 3
IXBF50N360 Datasheet Page 4
IXBF50N360 Datasheet Page 5
IXBF50N360 Datasheet Page 6
IXBF50N360

IXYS

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

3600V

Current - Collector (Ic) (Max)

70A

Current - Collector Pulsed (Icm)

420A

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 50A

Power - Max

290W

Switching Energy

-

Input Type

Standard

Gate Charge

210nC

Td (on/off) @ 25°C

46ns/205ns

Test Condition

960V, 50A, 5Ohm, 15V

Reverse Recovery Time (trr)

1.7µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

i4-Pac™-5 (3 Leads)

Supplier Device Package

ISOPLUS i4-PAC™