IX4424G Datasheet
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Manufacturer IXYS Integrated Circuits Division Series - Driven Configuration Low-Side Channel Type Independent Number of Drivers 2 Gate Type IGBT Voltage - Supply 4.5V ~ 35V Logic Voltage - VIL, VIH 0.8V, 3V Current - Peak Output (Source, Sink) 3A, 3A Input Type CMOS/TTL High Side Voltage - Max (Bootstrap) - Rise / Fall Time (Typ) 18ns, 18ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-DIP |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 44A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 18mOhm @ 40A, 10V Vgs(th) (Max) @ Id 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs 83nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5430pF @ 25V FET Feature - Power Dissipation (Max) 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISO TO-247-3 Package / Case TO-247-3 |
