ISL9N302AP3 Datasheet
ISL9N302AP3 Datasheet
Total Pages: 10
Size: 122.53 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
ISL9N302AP3
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Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.5mOhm @ 75A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 15V FET Feature - Power Dissipation (Max) 345W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
