IS61LPS51218B-200TQLI-TR Datasheet
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Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (512K x 18) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time 3.1ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-LQFP (14x20) |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time 3.1ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-LQFP (14x20) |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time 3.1ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-LQFP (14x20) |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (512K x 18) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time 3.1ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-LQFP (14x20) |
