IRLZ14STRR Datasheet
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 200mOhm @ 6A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V FET Feature - Power Dissipation (Max) 3.7W (Ta), 43W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 200mOhm @ 6A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V FET Feature - Power Dissipation (Max) 3.7W (Ta), 43W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 200mOhm @ 6A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V FET Feature - Power Dissipation (Max) 3.7W (Ta), 43W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 200mOhm @ 6A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V FET Feature - Power Dissipation (Max) 3.7W (Ta), 43W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 200mOhm @ 6A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V FET Feature - Power Dissipation (Max) 3.7W (Ta), 43W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 200mOhm @ 6A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V FET Feature - Power Dissipation (Max) 3.7W (Ta), 43W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 200mOhm @ 6A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V FET Feature - Power Dissipation (Max) 3.7W (Ta), 43W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |