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IRLML6302TR Datasheet

IRLML6302TR Datasheet
Total Pages: 8
Size: 215.81 KB
Infineon Technologies
This datasheet covers 1 part numbers: IRLML6302TR
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IRLML6302TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

780mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.7V, 4.5V

Rds On (Max) @ Id, Vgs

600mOhm @ 610mA, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.6nC @ 4.45V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

97pF @ 15V

FET Feature

-

Power Dissipation (Max)

540mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Micro3™/SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3