IRLIB4343 Datasheet
IRLIB4343 Datasheet
Total Pages: 8
Size: 234.6 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IRLIB4343
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 50mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 740pF @ 50V FET Feature - Power Dissipation (Max) 39W (Tc) Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Full-Pak Package / Case TO-220-3 Full Pack |
