IRLI2203N Datasheet
IRLI2203N Datasheet
Total Pages: 9
Size: 118.49 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IRLI2203N
|
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 61A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7mOhm @ 37A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V FET Feature - Power Dissipation (Max) 47W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Full-Pak Package / Case TO-220-3 Full Pack |
