IRLBD59N04ETRLP Datasheet
IRLBD59N04ETRLP Datasheet
Total Pages: 9
Size: 122.48 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IRLBD59N04ETRLP
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 59A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 18mOhm @ 35A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 2190pF @ 25V FET Feature - Power Dissipation (Max) 130W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263-5 Package / Case TO-263-6, D²Pak (5 Leads + Tab), TO-263BA |
