IRFSL4229PBF Datasheet
IRFSL4229PBF Datasheet
Total Pages: 8
Size: 275.26 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IRFSL4229PBF
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 45A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 48mOhm @ 26A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4560pF @ 25V FET Feature - Power Dissipation (Max) 330W (Tc) Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
