IRFPS3810 Datasheet
IRFPS3810 Datasheet
Total Pages: 8
Size: 115.47 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IRFPS3810
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 170A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9mOhm @ 100A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 390nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6790pF @ 25V FET Feature - Power Dissipation (Max) 580W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package SUPER-247™ (TO-274AA) Package / Case TO-274AA |
