IRFBL3703 Datasheet
IRFBL3703 Datasheet
Total Pages: 8
Size: 98.56 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IRFBL3703
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 260A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7V, 10V Rds On (Max) @ Id, Vgs 2.5mOhm @ 76A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 209nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8250pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 300W (Tc) Operating Temperature - Mounting Type Surface Mount Supplier Device Package SUPER D2-PAK Package / Case Super D2-Pak |
