IRFBA1405P Datasheet
IRFBA1405P Datasheet
Total Pages: 9
Size: 131.12 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IRFBA1405P
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 174A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5mOhm @ 101A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5480pF @ 25V FET Feature - Power Dissipation (Max) 330W (Tc) Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package SUPER-220™ (TO-273AA) Package / Case TO-273AA |
