Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFB16N50KPBF Datasheet

IRFB16N50KPBF Datasheet
Total Pages: 8
Size: 165.39 KB
Vishay Siliconix
This datasheet covers 2 part numbers: IRFB16N50KPBF, IRFB16N50K
IRFB16N50KPBF Datasheet Page 1
IRFB16N50KPBF Datasheet Page 2
IRFB16N50KPBF Datasheet Page 3
IRFB16N50KPBF Datasheet Page 4
IRFB16N50KPBF Datasheet Page 5
IRFB16N50KPBF Datasheet Page 6
IRFB16N50KPBF Datasheet Page 7
IRFB16N50KPBF Datasheet Page 8
IRFB16N50KPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

350mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

89nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2210pF @ 25V

FET Feature

-

Power Dissipation (Max)

280W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IRFB16N50K

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

350mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

89nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2210pF @ 25V

FET Feature

-

Power Dissipation (Max)

280W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3