IRF7350TRPBF Datasheet
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Manufacturer Infineon Technologies Series HEXFET® FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2.1A, 1.5A Rds On (Max) @ Id, Vgs 210mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Infineon Technologies Series HEXFET® FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2.1A, 1.5A Rds On (Max) @ Id, Vgs 210mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
