IRF6655TR1 Datasheet
IRF6655TR1 Datasheet
Total Pages: 11
Size: 265.97 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IRF6655TR1
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 4.2A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 62mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4.8V @ 25µA Gate Charge (Qg) (Max) @ Vgs 11.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V FET Feature - Power Dissipation (Max) 2.2W (Ta), 42W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET™ SH Package / Case DirectFET™ Isometric SH |
