IRF6645 Datasheet
IRF6645 Datasheet
Total Pages: 10
Size: 251.03 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IRF6645
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 5.7A (Ta), 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 35mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id 4.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 890pF @ 25V FET Feature - Power Dissipation (Max) 3W (Ta), 42W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET™ SJ Package / Case DirectFET™ Isometric SJ |
