IRF6637TR1 Datasheet
IRF6637TR1 Datasheet
Total Pages: 10
Size: 341.97 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IRF6637TR1
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 14A (Ta), 59A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7.7mOhm @ 14A, 10V Vgs(th) (Max) @ Id 2.35V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 15V FET Feature - Power Dissipation (Max) 2.3W (Ta), 42W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET™ MP Package / Case DirectFET™ Isometric MP |
