IRF6601 Datasheet
IRF6601 Datasheet
Total Pages: 13
Size: 265.13 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IRF6601
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 26A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.8mOhm @ 26A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3440pF @ 15V FET Feature - Power Dissipation (Max) 3.6W (Ta), 42W (Tc) Operating Temperature - Mounting Type Surface Mount Supplier Device Package DIRECTFET™ MT Package / Case DirectFET™ Isometric MT |
