IRF6100 Datasheet
IRF6100 Datasheet
Total Pages: 8
Size: 636.1 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IRF6100
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Manufacturer Infineon Technologies Series HEXFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 65mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1230pF @ 15V FET Feature - Power Dissipation (Max) 2.2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-FlipFet™ Package / Case 4-FlipFet™ |
