IR2152STR Datasheet
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Manufacturer Infineon Technologies Series - Driven Configuration Half-Bridge Channel Type Synchronous Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10V ~ 20V Logic Voltage - VIL, VIH - Current - Peak Output (Source, Sink) 125mA, 250mA Input Type RC Input Circuit High Side Voltage - Max (Bootstrap) 600V Rise / Fall Time (Typ) 80ns, 40ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer Infineon Technologies Series - Driven Configuration Half-Bridge Channel Type Synchronous Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10V ~ 20V Logic Voltage - VIL, VIH - Current - Peak Output (Source, Sink) 125mA, 250mA Input Type RC Input Circuit High Side Voltage - Max (Bootstrap) 600V Rise / Fall Time (Typ) 80ns, 40ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer Infineon Technologies Series - Driven Configuration Half-Bridge Channel Type Synchronous Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10V ~ 20V Logic Voltage - VIL, VIH - Current - Peak Output (Source, Sink) 125mA, 250mA Input Type RC Input Circuit High Side Voltage - Max (Bootstrap) 600V Rise / Fall Time (Typ) 80ns, 40ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-PDIP |
