IPP08CN10N G Datasheet
IPP08CN10N G Datasheet
Total Pages: 11
Size: 403.36 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IPP08CN10N G
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 95A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8.5mOhm @ 95A, 10V Vgs(th) (Max) @ Id 4V @ 130µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6660pF @ 50V FET Feature - Power Dissipation (Max) 167W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |
