Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPP065N04N G Datasheet

IPP065N04N G Datasheet
Total Pages: 9
Size: 556.04 KB
Infineon Technologies
This datasheet covers 1 part numbers: IPP065N04N G
IPP065N04N G Datasheet Page 1
IPP065N04N G Datasheet Page 2
IPP065N04N G Datasheet Page 3
IPP065N04N G Datasheet Page 4
IPP065N04N G Datasheet Page 5
IPP065N04N G Datasheet Page 6
IPP065N04N G Datasheet Page 7
IPP065N04N G Datasheet Page 8
IPP065N04N G Datasheet Page 9
IPP065N04N G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 20V

FET Feature

-

Power Dissipation (Max)

68W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3